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NTE55 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Complementary Transistors - NTE

भाग संख्या NTE55
समारोह Silicon Complementary Transistors
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE55?> डेटा पत्रक पीडीएफ

NTE55 pdf
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 2)
VCE(sus)
ICEO
ICBO
IEBO
IC = 10mA, IB = 0, Note 2
VCE = 150V, IB = 0
VCE = 150V, IE = 0
VCE = 150V, IC = 0
DC Current Gain
DC Current Gain Linearity
hFE VCE = 2V, IC = 0.1A
VCE = 2V, IC = 2A
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 0.1A
hFE VCE from 2V to 20V,
IC from 0.1A to 3A
NPN to PNP
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
VCE(sat) IC = 1A, IB = 0.1A
VBE(on) VCE = 2V, IC = 1A
Current GainBandwidth Product
ft VCE = 10V, IC = 500mA,
ftest = 10MHz, Note 3
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 3. fT = |hfe|  ftest
.420 (10.67)
Max
.110 (2.79)
Min Typ Max Unit
150 – – V
– – 0.1 mA
– – 10 µA
– – 10 µA
40
40
40
20
2
3
– – 0.5 V
––1V
30
MHz
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab

विन्यास 2 पेज
डाउनलोड[ NTE55 Datasheet.PDF ]


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