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NTE50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Complementary Transistors - NTE

भाग संख्या NTE50
समारोह Silicon Complementary Transistors
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE50?> डेटा पत्रक पीडीएफ

NTE50 pdf
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
ON Characteristics (Note 2)
V(BR)CEO IC = 1mA, IB = 0
V(BR)EBO IE = 100µA, IC = 0
ICBO VCB = 40V, IE = 0
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ON Voltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(on)
IC = 50mA, VCE = 1V
IC = 250mA, VCE = 1V
IC = 500mA, VCE = 1V
IC = 250mA, IB = 10mA
IC = 250mA, IB = 25mA
IC = 250mA, VCE = 5V
Current GainBandwidth Product
fT IC = 250mA, VCE = 5V,
f = 100MHz, Note 1
Output Capacitance
Cob VCB = 10V, IE = 0, f = 100kHz
Min Typ Max Unit
100 – – V
4––V
– – 100 nA
80 125
60 100
55
0.18 0.4
0.1
0.74 1.2
V
V
V
50 150 MHz
6 12 pF
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.380 (9.56)
C
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.180 (4.57)
.132 (3.35) Dia
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.400
(10.16)
Min
E BC
.100 (2.54)
.100 (2.54)

विन्यास 2 पेज
डाउनलोड[ NTE50 Datasheet.PDF ]


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