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NTE378 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Complementary Transistors - NTE

भाग संख्या NTE378
समारोह Silicon Complementary Transistors
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE378?> डेटा पत्रक पीडीएफ

NTE378 pdf
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
ICES
IEBO
VCE = 80V, VBE = 0
VEB = 5V
– – 10 µA
– – 100 µA
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VCE = 1V, IC = 2A, TJ = +25°C
VCE = 1V, IC = 4A, TJ = +25°C
IC = 8A, IB = 400mA
IC = 8A, Ib = 800mA
60
40
– – 1.0 V
– – 1.5 V
Collector Capacitance
NTE377
NTE378
Ccb
VCB = 10V, ftest = 1MHz
130
230
pF
pF
Gain Bandwidth Product
NTE377
NTE378
fT
IC = 500mA, VCE = 10V, f = 20MHz 50 MHz
40 MHz
Switching Times
Delay and Rise Time
NTE377
NTE378
td + tr
IC = 5A, IB1 = 500mA
300
135
ns
ns
Storage Time
Fall Time
NTE377
ts IC = 5A, IB1 = IB2 = 500mA
tf
500
140
ns
ns
NTE378
100 ns
.147 (3.75)
Dia Max
.420 (10.67)
Max
.110 (2.79)
.500 (12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250
(6.35)
Max
.500 (12.7)
Min
Emitter
Collector/Tab

विन्यास 2 पेज
डाउनलोड[ NTE378 Datasheet.PDF ]


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