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NTE275 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Complementary Transistors - NTE

भाग संख्या NTE275
समारोह Silicon Complementary Transistors
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE275?> डेटा पत्रक पीडीएफ

NTE275 pdf
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
ON Characteristics
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
BaseEmitter ON Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
VBE(on)
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
IC = 2A, IB = 8mA
IC = 4A, IB = 40mA
IC = 4A, IB = 40mA
VCE = 3V, IC = 2A
750
100
Magnitude of Common Emitter
SmallSignal ShortCircuit
|hfe| IC = 1.5A, VCE = 3V, f = 1MHz
Forward Current Transfer Ratio
4.0
Output Capacitance
NTE274
NTE275
Cob
VCB = 10V, IE = 0, f = 0.1MHz
SmallSignal Current Gain
hfe IC = 1.5A, VCE = 3V, f = 1kHz
300
Typ Max Unit
18000
––
2.0 V
3.0 V
4.0 V
2.8 V
––
120 pF
200 pF
––
NTE274
C
B
.485 (12.3)
.295 (7.5)
Dia
.062 (1.57)
E
NTE275
.031 (0.78) Dia
.360 (9.14)
Min
.960 (24.3)
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
C
.200
(5.08)
.145 (3.7) R Max
B
Collector/Case
Emitter
E

विन्यास 2 पेज
डाउनलोड[ NTE275 Datasheet.PDF ]


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