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NTE271 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Complementary Transistors - NTE

भाग संख्या NTE271
समारोह Silicon Complementary Transistors
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE271?> डेटा पत्रक पीडीएफ

NTE271 pdf
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
hFE
CollectorEmitter Saturation Voltage VCE(sat)
BaseEmitter Saturation Voltage
VBE(sat)
Switching Characteristics (Resistive Load)
IC = 5A, VCE = 4V
IC = 10A, VCE = 4V
IC = 5A, IB = 10mA
IC = 10A, IB = 40mA
IC = 10A, IB = 40mA
1000 – –
500 – –
– – 2.0 V
– – 3.0 V
– – 3.5 V
Delay Time
Rise Time
Storage Time
Fall Time
td VCC = 30V, IC = 5A,
0.15 µs
tr
IB = 20mA, Duty Cycle 2%,
IB1 = IB2, RC & RB Varied,
0.55
µs
ts TJ = +25°C
2.5 µs
tf 2.5 µs
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle 2%.
NTE270
C
B
NTE271
C
B
E
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
E
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners

विन्यास 2 पेज
डाउनलोड[ NTE271 Datasheet.PDF ]


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