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NTE269 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Complementary Transistors - NTE

भाग संख्या NTE269
समारोह Silicon Complementary Transistors
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE269?> डेटा पत्रक पीडीएफ

NTE269 pdf
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 4)
V(BR)CEO IC = 10mA, Note 4
ICBO VCB = 50V, IE = 0, TJ = +150°C
ICES VCE = 50V, VBE = 0
IEBO VEB = 13V, IC = 0
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Dynamic Characteristics
hFE
VCE(sat)
VBE(sat)
IC = 200mA, VCE = 5V
IC = 1.5A, VCE = 5V
IC = 1.5A, IB = 3mA
IC = 1.5A, IB = 3mA
Collector Capacitance
NTE268
NTE269
Ccb
VCB = 10V, IE = 0, f = 1MHz
High Frequency Current Gain
|hfe| IC = 20mA, VCE = 5V, f = 100MHz
Min Typ
50
––
––
––
10000
1000
––
––
1.0
Max Unit
V
20 µA
0.5 µA
100 nA
1.5 V
2.5 V
10 pF
25 pF
Note 4. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
NTE268
C
B
E
NTE269
C
B
E
.380 (9.56)
.180 (4.57)
C .132 (3.35) Dia
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.325
(9.52)
.070 (1.78) x 45°
Chamf
.050 (1.27)
.400
(10.16)
Min
E BC
.100 (2.54)
.100 (2.54)

विन्यास 2 पेज
डाउनलोड[ NTE269 Datasheet.PDF ]


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