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CEB1012 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Transistor - Chino-Excel Technology

भाग संख्या CEB1012
समारोह N-Channel Enhancement Mode Field Transistor
मैन्युफैक्चरर्स Chino-Excel Technology 
लोगो Chino-Excel Technology लोगो 
पूर्व दर्शन
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<?=CEB1012?> डेटा पत्रक पीडीएफ

CEB1012 pdf
CEP1012/CEB1012
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 120V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 10A
Dynamic Characteristics c
Forward Transconductance
gFS VDS = 10V, ID = 5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 15A,
VGS = 10V, RGEN = 20
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 96V, ID = 10A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 10A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
120
2
Typ
90
7
685
190
80
14
9
36
14
23.1
3.6
8.9
Max Units
25
100
-100
V
µA
nA
nA
4V
120 m
S
pF
pF
pF
28 ns
18 ns
72 ns
28 ns
30.7 nC
nC
nC
10 A
1.2 V
4
2

विन्यास 4 पेज
डाउनलोड[ CEB1012 Datasheet.PDF ]


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