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IS46DR81280C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DDR2 DRAM - ISSI

भाग संख्या IS46DR81280C
समारोह DDR2 DRAM
मैन्युफैक्चरर्स ISSI 
लोगो ISSI लोगो 
पूर्व दर्शन
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<?=IS46DR81280C?> डेटा पत्रक पीडीएफ

IS46DR81280C pdf
IS43/46DR81280C, IS43/46DR16640C
GENERAL DESCRIPTION
Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue
for a burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active
command, which is then followed by a Read or Write command. The address bits registered coincident with the active
command are used to select the bank and row to be accessed (BA0-BA2 select the bank; A0-A12(x16) or A0-A13(x8)
select the row). The address bits registered coincident with the Read or Write command are used to select the starting
column location A0-A9 for the burst access and to determine if the auto precharge A10 command is to be issued.
Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information
covering device initialization, register definition, command descriptions and device operation.
FUNCTIONAL BLOCK DIAGRAM
DMa - DMb
RDQS, RDQS
Notes:
1. An:n = no. of address pins - 1
2. DQm: m = no. of data pins - 1
3. For x8 devices:
DMa - DMb = DM; DQSa - DQSb = DQS; DQSa - DQSb = DQS; RDQS, RDQS available only for x8
4. For x16 devices:
DMa - DMb = UDM, LDM; DQSa - DQSb = UDQS, LDQS; DQSa - DQSb = UDQS, LDQS
2 Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
6/4/2013

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डाउनलोड[ IS46DR81280C Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
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ISSI


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