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IS46DR32801A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 8Mx32 256Mb DDR2 DRAM - ISSI

भाग संख्या IS46DR32801A
समारोह 8Mx32 256Mb DDR2 DRAM
मैन्युफैक्चरर्स ISSI 
लोगो ISSI लोगो 
पूर्व दर्शन
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IS46DR32801A pdf
IS43DR32800A, IS43/46DR32801A
General Description
Read and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue
for a burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active
command, which is then followed by a Read or Write command. The address bits registered coincident with the active
command are used to select the bank and row to be accessed (BA0-BA1 select the bank; A0-A11/A12 select the
row and A0-A7/A8 select the column). The address bits registered coincident with the Read or Write command are
used to select the starting column location for the burst access and to determine if the auto precharge command is
to be issued. Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed
information covering device initialization, register definition, command descriptions and device operation.
Functional Block Diagram
CK
CK
CKE
ODT
CS
RAS
CAS
WE
COMMAND
DECODER
&
CLOCK
GENERATOR
MODE
REGISTERS
A0 – An,
BA0 – BA1
ROW
ADDRESS
LATCH
COLUMN
ADDRESS LATCH
BURST COUNTER
COLUMN ADDRESS
BUFFER
REFRESH
CONTROLLER
SELF
REFRESH
CONTROLLER
REFRESH
COUNTER
ROW
ADDRESS
BUFFER
BANK CONTROL LOGIC
DQ0 – DQ31
DLL
MEMORY CELL
ARRAY
MEMORY CELL
ARRABYANK 0
BANK 0
SENSE AMP
SENSE AMP
I/O GATE
&
MASK LOGIC
COCLOCULOMULNMUNMDENDCEDOCEDOCEDOREDRER
COLUMN DECODER
ODT CIRCUIT
OUTPUT
DATA
BUFFER
INPUT
DATA
BUFFER
DM0 – DM3
DATA
STROBE
GENERATOR
DQS0 – DQS3,
DQS0 – DQS3
Notes:
1.) An: n = no. of address pins – 1
2 Integrated Silicon Solution, Inc. — www.issi.com
Rev.  00E
09/08/2010

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IS46DR32801A8Mx32 256Mb DDR2 DRAMISSI
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