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CMS30I30A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Schottky Barrier Diode - Toshiba

भाग संख्या CMS30I30A
समारोह Schottky Barrier Diode
मैन्युफैक्चरर्स Toshiba 
लोगो Toshiba लोगो 
पूर्व दर्शन
1 Page
		
<?=CMS30I30A?> डेटा पत्रक पीडीएफ

CMS30I30A pdf
5. Thermal Characteristics
CMS30I30A
Characteristics
Thermal resistance (junction-to-ambient)
Symbol
Rth(j-a)
Thermal resistance (junction-to-lead)
Rth(j-ℓ)
Note
Test Condition
Max Unit
Device mounted on ceramic pc board
(soldering land size: 2 mm × 2 mm)
60 /W
Device mounted on glass-epoxy board 135
(soldering land size: 6 mm × 6 mm)
Junction to cathode lead
16
6. Electrical Characteristics (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Test Condition
Min Typ. Max Unit
Peak forward voltage
VFM(1)
IFM = 0.5 A (pulse measurement)
0.30
V
VFM(2)
IFM = 1.0 A (pulse measurement)
0.33
VFM(3)
IFM = 3.0 A (pulse measurement)
0.40 0.49
Repetitive peak reverse current
IRRM(1)
VRRM = 5 V (pulse measurement)
14 µA
IRRM(2)
VRRM = 30 V (pulse measurement)
28 100
Junction capacitance
Cj VR = 10 V, f = 1.0 MHz
82 pF
7. Marking
Marking Code
SQ
Part Number
CMS30I30A
Fig. 7.1 Marking
2 2014-01-24
Rev.3.0

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डाउनलोड[ CMS30I30A Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
CMS30I30ASchottky Barrier DiodeToshiba
Toshiba


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