QIS1790001 डेटा पत्रक PDF( Datasheet डाउनलोड )

डेटा पत्रक - Single IGBT Module - Powerex

भाग संख्या QIS1790001
समारोह Single IGBT Module
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QIS1790001 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Single IGBT Module
900 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V)
VCES 1700 Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20 Volts
Collector Current (DC, TC = TBD°C)*2,*4 IC 900 Amperes
Collector Current (Pulse, Repetitive)*3 ICRM 1800 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot TBD Watts
Emitter Current (TC = TBD°C)*2,*4
IE*1 900 Amperes
Emitter Current (Pulse, Repetitive)*3
IERM*1 1800 Amperes
Maximum Junction Temperature
Tj(max) 175 °C
Maximum Case Temperature*2 TC(max) 125 °C
Operating Junction Temperature
-40 to +150
Storage Temperature
-40 to +125
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
VISO 3500 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 3

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भाग संख्याविवरणविनिर्माण
QIS1790001Single IGBT ModulePowerex

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