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QID6508001 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual IGBT HVIGBT Module - Powerex

भाग संख्या QID6508001
समारोह Dual IGBT HVIGBT Module
मैन्युफैक्चरर्स Powerex 
लोगो Powerex लोगो 
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QID6508001 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID6508001
Dual IGBT HVIGBT Module
85 Amperes/6500 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
QID6508001 Units
Junction Temperature
Tj
-40 to +150
°C
Storage Temperature
Tstg
-40 to +125
°C
Collector-Emitter Voltage (VGE = 0V)
VCES
Tj = -40°C
5800
Volts
Tj = +25°C
6300
Volts
Tj = +125°C
6500
Volts
Gate-Emitter Voltage (VCE = 0V)
VGES ±20 Volts
Collector Current (TC = 110°C)
IC
85 Amperes
Peak Collector Current (Pulse)
ICM 170*2 Amperes
Diode Forward Current (TC = 102°C)*1 IF
85 Amperes
Diode Forward Surge Current (Pulse)*1 IFM 170*2 Amperes
Maximum Collector Dissipation
PC 1100 Watts
(TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M6 Terminal Screws
44 in-lb
Mounting Torque, M6 Mounting Screws
44 in-lb
Module Weight (Typical)
900 Grams
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 6900 VRMS, V2 = 5200 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 4500V, VGE = ±15V, Tj = 125°C)
Viso 9.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES VCE = VCES, VGE = 0V, Tj = 25°C
VCE = VCES, VGE = 0V, Tj = 125°C
Gate Leakage Current
IGES VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th) IC = 13mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat) IC = 85A, VGE = 15V, Tj = 25°C
IC = 85A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG VCC = 3600V, IC = 85A, VGE = 15V
Emitter-Collector Voltage*1 VEC IE = 85A, VGE = 0V, Tj = 25°C
IE = 85A, VGE = 0V, Tj = 125°C
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*3 Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min.
5.8
Typ. Max. Units
— 3 mA
3 — mA
— 0.5 µA
6.3 6.8 Volts
3.8*3 — Volts
4.8 5.6 Volts
1.05
µC
3.3 — Volts
3.4 4.2 Volts
Information presented is based upon manufacturers testing and projected capabilities.This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 2

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QID6508001Dual IGBT HVIGBT ModulePowerex
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