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QID3350001 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual IGBT HVIGBT Module - Powerex

भाग संख्या QID3350001
समारोह Dual IGBT HVIGBT Module
मैन्युफैक्चरर्स Powerex 
लोगो Powerex लोगो 
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QID3350001 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3350001
Dual IGBT HVIGBT Module
500 Amperes/3300 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol QID3350001 Units
Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +150°C)
VCES 3300 Volts
Collector-Emitter Voltage (VGE = 0V, Tj = -50°C)
VCES 3200 Volts
Junction Temperature
Tj -50 to 150 °C
Operating Junction Temperature
Tjop
-50 to 150
°C
Storage Temperature
Tstg
-55 to 150
°C
Gate-Emitter Voltage (VCE = 0V)
VGES ±20 Volts
Collector Current (TC = 92°C)
IC 500 Amperes
Peak Collector Current (Pulse)
ICM 1000*1 Amperes
Diode Forward Current*2 IF 500 Amperes
Diode Forward Surge Current (Pulse)*2 IFM 1000*1 Amperes
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤1 50°C)
PC 4500 Watts
Mounting Torque, M4/M8 Terminal Screws
2/15
N·m
Mounting Torque, M6 Mounting Screws
— 6 N·m
Module Weight (Typical)
— 900 Grams
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 3500 Vrms, V2 = 2600 Vrms, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 2600V, VCE ≤ VCES, VGE = +15V/-8V, Tj = 150°C)
Viso 6 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V, Tj = 25°C
VCE = VCES, VGE = 0V, Tj = 125°C
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 40mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 500A, VGE = 15V, Tj = 25°C
IC = 500A, VGE = 15V, Tj = 125°C
IC = 500A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 1800V, IC = 500A, VGE = 15V
Emitter-Collector Voltage*2
VEC
IE = 500A, VGE = 0V, Tj = 25°C
IE = 500A, VGE = 0V, Tj = 125°C
IE = 500A, VGE = 0V, Tj = 150°C
*1 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min. Typ. Max. Units
— — 2.0 mA
— 10
20 mA
— — 0.5 µA
5.7 6.2
6.7 Volts
2.7*3
2.85
Volts
— 3.1 3.60 Volts
— 3.6
— Volts
— 4.4 — µC
— 2.4 3.0 Volts
— 2.5 3.2 Volts
— 2.4 — Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 7

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