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QID3330001 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual IGBT HVIGBT Module - Powerex

भाग संख्या QID3330001
समारोह Dual IGBT HVIGBT Module
मैन्युफैक्चरर्स Powerex 
लोगो Powerex लोगो 
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QID3330001 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3330001
Dual IGBT HVIGBT Module
300 Amperes/3300 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Operating Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (TC = 102°C)
Peak Collector Current (Pulse)
Diode Forward Current** (TC = 99°C)
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms, VR = 0V, Tj = 125°C)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 2500V, VCE ≤ VCES, VGE = +15V/-8V, RG(on) = 15Ω, RG(off) = 50Ω, Tj = 125°C)
Symbol QID3330001 Units
Tj -50 to 150 °C
Top -50 to 150 °C
Tstg
-50 to 150
°C
VCES 3300 Volts
VGES ±20 Volts
IC 300 Amperes
ICM 600* Amperes
IF 300 Amperes
IFM 600* Amperes
I2t 22 kA2sec
PC 2670 Watts
— 44 in-lb
— 44 in-lb
— 900 Grams
Viso 9.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V, Tj = 125°C
VCE = VCES, VGE = 0V, Tj = 150°C
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 25mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 300A, VGE = 15V, Tj = 25°C
IC = 300A, VGE = 15V, Tj = 125°C
IC = 300A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 1800V, IC = 300A, VGE = 15V
Emitter-Collector Voltage**
VEC
IE = 300A, VGE = 0V, Tj = 25°C
IE = 300A, VGE = 0V, Tj = 125°C
IE = 300A, VGE = 0V, Tj = 150°C
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min. Typ. Max. Units
— — 3.0 mA
— — 10.0 mA
— — 0.5 µA
5.7 6.2
6.7 Volts
2.7***
3.3
Volts
— 3.4 4.0 Volts
— 3.6
— Volts
— 2.7 — µC
— 2.3 3.0 Volts
— 2.45 — Volts
— 2.55 — Volts
2 07/14 Rev. 2

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