DataSheet.in

QID3320004 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual IGBT HVIGBT Module - Powerex

भाग संख्या QID3320004
समारोह Dual IGBT HVIGBT Module
मैन्युफैक्चरर्स Powerex 
लोगो Powerex लोगो 
पूर्व दर्शन
1 Page
		
<?=QID3320004?> डेटा पत्रक पीडीएफ

QID3320004 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Operating Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (TC = 102°C)
Collector Current (TC = 25°C)
Peak Collector Current (Pulse)
Diode Forward Current** (TC = 99°C)
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms, VR = 0V, Tj = 125°C)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M5 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 3500 VRMS, V2 = 2600 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 2500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C)
Symbol QID3320004 Units
Tj -50 to +150 °C
Top -50 to +150 °C
Tstg
-55 to +150
°C
VCES 3300 Volts
VGES ±20 Volts
IC 200 Amperes
IC 370 Amperes
ICM 400* Amperes
IF 200 Amperes
IFM 400* Amperes
I2t 15 kA2sec
PC 2080 Watts
— 35 in-lb
— 44 in-lb
— 800 Grams
Viso 6.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 200A, VGE = 15V, Tj = 25°C
IC = 200A, VGE = 15V, Tj = 125°C
IC = 200A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 1800V, IC = 170A, VGE = 15V
Emitter-Collector Voltage**
VEC
IE = 200A, VGE = 0V, Tj = 25°C
IE = 200A, VGE = 0V, Tj = 125°C
IE = 200A, VGE = 0V, Tj = 150°C
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min. Typ. Max. Units
— — 2.0 mA
— — 0.5 µA
5.5 6.0
6.5 Volts
2.7***
3.0
Volts
— 3.4 4.0 Volts
— 3.6
— Volts
— 1.8 — µC
— 2.3 3.0 Volts
— 2.45 — Volts
— 2.55 — Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 6

विन्यास 6 पेज
डाउनलोड[ QID3320004 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
QID3320002Dual IGBT HVIGBT ModulePowerex
Powerex
QID3320004Dual IGBT HVIGBT ModulePowerex
Powerex


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English