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QID4515001 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HVIGBT Module - Powerex

भाग संख्या QID4515001
समारोह HVIGBT Module
मैन्युफैक्चरर्स Powerex 
लोगो Powerex लोगो 
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<?=QID4515001?> डेटा पत्रक पीडीएफ

QID4515001 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID4515001
Dual IGBTMOD™ HVIGBT Module
150 Amperes/4500 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current, DC (TC = 91°C)
Peak Collector Current (Pulse)
Diode Forward Current**
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C)
Symbol QID4515001 Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
VCES 4500 Volts
VGES ±20 Volts
IC 150 Amperes
ICM 300* Amperes
IF 150 Amperes
IFM 300* Amperes
I2t 10 kA2sec
PC 1440 Watts
— 44 in-lb
— 44 in-lb
— 900 Grams
Viso 9.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES VCE = VCES, VGE = 0V
Gate Leakage Current
IGES VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th) IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C
IC = 150A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG VCC = 2250V, IC = 150A, VGE = 15V
Emitter-Collector Voltage**
VEC IE = 150A, VGE = 0V
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min.
4.5
Typ.
6.0
3.5
4.0
1.4
4.7
Max.
2.7
0.5
7.5
3.9***
5.6
Units
mA
µA
Volts
Volts
Volts
µC
Volts
2 09/12 Rev. 8

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डाउनलोड[ QID4515001 Datasheet.PDF ]


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