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QID1210005 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Split Dual Si/SiC Hybrid IGBT Module - Powerex

भाग संख्या QID1210005
समारोह Split Dual Si/SiC Hybrid IGBT Module
मैन्युफैक्चरर्स Powerex 
लोगो Powerex लोगो 
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QID1210005 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID1210005
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Repetitive Peak Emitter Current (TC = 25°C, tp = 10ms, Half Sine Pulse)**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol QID1210005 Units
Tj
–40 to 150
°C
Tstg
–40 to 150
°C
VCES 1200 Volts
VGES ±20 Volts
IC 100* Amperes
ICM 200* Amperes
IE 80* Amperes
IEM 455* Amperes
PC 730 Watts
— 40 in-lb
— 270 Grams
VISO 2500 Volts
IGBT Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min. Typ. Max. Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
— —
1.0 mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
— —
0.5 µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
4.5 6.0
7.5 Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts
IC = 100A, VGE = 15V, Tj = 125°C
— 5.0
— Volts
Total Gate Charge
QG VCC = 600V, IC = 100A, VGE = 15V — 450 — nC
Input Capacitance
Cies
— —
16 nf
Output Capacitance
Coes
VCE = 10V, VGE = 0V
— —
1.3 nf
Reverse Transfer Capacitance
Cres
— — 0.3 nf
Inductive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 100A,
— — TBD ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
TBD
ns
Switch
Turn-off Delay Time
td(off)
RG = 3.1Ω,
— — TBD ns
TimeFall Time
tf
Inductive Load Switching Operation
TBD
ns
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi).
2 12/12 Rev. 2

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