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QID3310006 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual IGBT HVIGBT Module - Powerex

भाग संख्या QID3310006
समारोह Dual IGBT HVIGBT Module
मैन्युफैक्चरर्स Powerex 
लोगो Powerex लोगो 
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QID3310006 pdf
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3310006
Dual IGBT HVIGBT Module
100 Amperes/3300 Volts
Preliminary
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Operating Temperature
Storage Temperature
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (TC = 102°C)
Collector Current (TC = 25°C)
Peak Collector Current (Pulse)
Diode Forward Current** (TC = 99°C)
Diode Forward Surge Current** (Pulse)
I2t for Diode (t = 10ms, VR = 0V, Tj = 125°C)
Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) 150°C)
Mounting Torque, M5 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
Partial Discharge
(V1 = 3500 VRMS, V2 = 2600 VRMS, f = 60Hz (Acc. to IEC 1287))
Maximum Short-Circuit Pulse Width,
(VCC ≤ 2500V, VCE ≤ VCES, VGE = 15V, Tj = 125°C)
Symbol QID3310006 Units
Tj -50 to +150 °C
Top -50 to +150 °C
Tstg
-55 to +150
°C
VCES 3300 Volts
VGES ±20 Volts
IC 100 Amperes
IC 185 Amperes
ICM 200* Amperes
IF 100 Amperes
IFM 200* Amperes
I2t 7.5 kA2sec
PC 1040 Watts
— 35 in-lb
— 44 in-lb
— 800 Grams
Viso 6.0 kVolts
Qpd 10 pC
tpsc 10 µs
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C
IC = 100A, VGE = 15V, Tj = 125°C
IC = 100A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG VCC = 1800V, IC = 85A, VGE = 15V
Emitter-Collector Voltage**
VEC
IE = 100A, VGE = 0V, Tj = 25°C
IE = 100A, VGE = 0V, Tj = 125°C
IE = 100A, VGE = 0V, Tj = 150°C
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Min. Typ. Max. Units
— — 1.0 mA
— — 0.5 µA
5.5 6.0
6.5 Volts
2.7***
3.0
Volts
— 3.4 4.0 Volts
— 3.6
— Volts
— 0.9 — µC
— 2.3 3.0 Volts
— 2.45 — Volts
— 2.55 — Volts
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 11/14 Rev. 1

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