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MRF555 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN SILICON RF LOW POWER TRANSISTOR - Motorola

भाग संख्या MRF555
समारोह NPN SILICON RF LOW POWER TRANSISTOR
मैन्युफैक्चरर्स Motorola 
लोगो Motorola लोगो 
पूर्व दर्शन
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<?=MRF555?> डेटा पत्रक पीडीएफ

MRF555 pdf
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
FUNCTIONAL TESTS (f = 470 MHz)
Common–Emitter Power Gain
(VCC = 12.5 Vdc, Pout = 1.5 W)
Gpe 11 12.5 — dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 1.5 W)
ηc 50 60 — %
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin = 125 mW,
VSWR 10:1 all phase angles)
ψ
No Degradation in Output Power
RF
POWER
INPUT
B
L1
Z1 Z2
L2
C1 C4
C2 C3
C7
L3
D.U.T.
L5
B
C8
+
C9
L4
Z3
C5
+
VCC
C6
RF
POWER
OUTPUT
*C1, C3, C6 — 0.8 – 11 pF Johanson
C2 — 15 pF Clamped Mica, Mini–Underwood
C4 — 36 pF Clamped Mica, Mini–Underwood
C5 — 470 pF Ceramic Chip Capacitor
C7 — 91 pF Clamped Mica, Mini–Underwood
C8 — 68 pF Clamped Mica, Mini–Underwood
C9 — 1.0 µF, 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B
*Fixed tuned for broadband response
L1 — 5 Turns #21 AWG, 5/32I.D.
L2, L3 — 60 x 125 x 250 Mils Copper Pad on 27 Mil Thick
L2, L3 — Alumina Substrate
L4, L5 — 7 Turns #21 AWG 5/32I.D.
Z1 — 1.29x 0.16Microstrip
Z2 — 0.70x 0.16Microstrip
Z3 — 2.18x 0.16Microstrip
PCB — 1/16Glass Teflon, 1 oz. cu. clad,
PCB — double sided, εr = 2.5
Figure 1. 400 – 512 MHz Broadband Circuit
MRF555
2
20
Pout = 1.5 W
VCC = 12.5 Vdc
16
Gpe
12
ηc
65
60
8 55
4 IRL 10
15
0 20
400 425 450 475 500 525
f, FREQUENCY (MHz)
Figure 2. Performance in Broadband Circuit
MOTOROLA RF DEVICE DATA

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डाउनलोड[ MRF555 Datasheet.PDF ]


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