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MRF555 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS - Microsemi

भाग संख्या MRF555
समारोह RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
मैन्युफैक्चरर्स Microsemi 
लोगो Microsemi लोगो 
पूर्व दर्शन
1 Page
		
<?=MRF555?> डेटा पत्रक पीडीएफ

MRF555 pdf
MRF555
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVCEO
BVCES
BVEBO
ICES
HFE
Collector-Emitter Breakdown Voltage
(IC = 5 mAdc, IB = 0)
Collector-Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 100 mA, VCE = 5.0 Vdc) Both
Min.
16
30
3.0
-
50
Value
Typ.
-
-
-
-
-
Max.
-
-
-
5
200
Unit
Vdc
Vdc
Vdc
mA
-
DYNAMIC
Symbol
Test Conditions
COB
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Min.
-
Value
Typ.
---
Max.
5.5
Unit
pF
MSC1316.PDF 10-25-99

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डाउनलोड[ MRF555 Datasheet.PDF ]


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