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1N4448W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Small Signal Fast Switching Diode - Vishay

भाग संख्या 1N4448W
समारोह Small Signal Fast Switching Diode
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=1N4448W?> डेटा पत्रक पीडीएफ

1N4448W pdf
www.vishay.com
1N4448W
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Leakage current
Capacitance
Reverse recovery time
IF = 5 mA
IF = 100 mA
VR = 20 V
VR = 75 V
VR = 20 V, TJ = 150 °C
VF = VR = 0 V
IF = 10 mA, iR = 1 mA,
VR = 6 V, RL = 100
VF 0.62
VF
IR
IR
IR
trr
MAX.
0.72
1
25
5
50
4
4
UNIT
V
V
nA
μA
μA
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103
102 Tj = 100 °C
Tj = 25 °C
10
1
10- 1
10- 2
0
18105
1
VF (V)
Fig. 1 - Forward Characteristics
2
mW
1000
900
800
Ptot 700
600
500
400
300
200
100
0
0
17439
100
Tamb
200 °C
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
5
2
103
5
2
102
5
2
10
5
2
17438
10-2
Tj = 25 °C
f = 1 kHz
10-1 1
10
IF (mA)
102
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
1.1 Tj = 25 °C
f = 1 MHz
1.0
0.9
0.8
0.7
0 2 4 6 8 10
17440
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.5, 13-May-13
2 Document Number: 85722
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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