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IRF100B201 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF100B201
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF100B201?> डेटा पत्रक पीडीएफ

IRF100B201 pdf
  IRF100B201/IRF100S201
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Max.
192
136
690
441
2.9
± 20
-55 to + 175  
300
10 lbf·in (1.1 N·m)
Units
A 
W
W/°C
V
°C  
 
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited)
EAS (tested)
IAR
EAR
Single Pulse Avalanche Energy 
Single Pulse Avalanche Energy Tested Value 
Avalanche Current
Repetitive Avalanche Energy
567
1005
240
See Fig 15, 15, 23a, 23b 
mJ
A
mJ
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case 
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
RJA Junction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
–––
Max.
0.34
–––
62
40
Units
°C/W  
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
Typ.
–––
0.1
3.5
–––
–––
–––
–––
–––
2.2
Max.
–––
–––
4.2
4.0
20
250
100
-100
–––
Units
V
V/°C
m
V
µA
nA

Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 115A
VDS = VGS, ID = 250µA
VDS =100 V, VGS = 0V
VDS = 80V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 86µH, RG = 50, IAS = 115A, VGS =10V.
 ISD 115A, di/dt 1400A/µs, VDD V(BR)DSS, TJ 175°C.
 Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 45A, VGS =10V.
This value determined from sample failure population, starting TJ =25°C, L= 86µH, RG = 50, IAS =115A, VGS =10V.
2 www.irf.com © 2015 International Rectifier
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March 26, 2015

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