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TGL60N100ND1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPT trench IGBT - TRinno

भाग संख्या TGL60N100ND1
समारोह NPT trench IGBT
मैन्युफैक्चरर्स TRinno 
लोगो TRinno लोगो 
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TGL60N100ND1 pdf
TGL60N100ND1
NPT trench IGBT
Electrical Characteristics of the IGBT TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ
OFF
Collector Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
BVCES
ICES
IGES
VGE = 0V, IC = 1mA
VCE = 1000V, VGE = 0V
VCE = 0V, VGE = 20V
1000
--
--
--
--
--
Max
--
1
± 250
Units
V
mA
nA
ON
Gate Emitter Threshold Voltage
Collector Emitter Saturation Voltage
VGE(TH)
VCE(SAT)
VGE = VCE, IC = 60mA
VGE= 15V, IC = 60A, TJ = 25 oC
VGE = 15V, IC = 60A, TJ = 125 oC
3.5 5.5
-- 2.3
-- 2.8
7.5
2.9
--
V
V
V
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CIES
COES
CRES
VCE = 30V,
VGE = 0V
f = 1MHz
-- 5600
-- 150
-- 115
--
--
--
pF
pF
pF
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
td(on)
-- 230
--
ns
tr
-- 210
--
ns
td(off)
VCC = 600V, IC = 60A
-- 1480
--
ns
tf
RG = 50Ω, VGE = 15V
-- 125 230
ns
EON
Inductive Load, TJ = 25 oC
-- 13.1 20
mJ
EOFF
-- 6.3 10
mJ
ETS
-- 19.4 30
mJ
td(on)
-- 200
--
ns
tr
-- 200
--
ns
td(off)
VCC = 600V, IC = 60A
-- 1670
--
ns
tf
RG = 50Ω, VGE = 15V
-- 160
--
ns
EON
Inductive Load, TJ = 125 oC
-- 13.3 20
mJ
EOFF
-- 7.6 11.4
mJ
ETS
-- 20.9 31.4
mJ
Qg
-- 270 405
nC
Qge
VCC = 600V, IC = 60A
VGE = 15V
-- 45 68
nC
Qgc
-- 100 150
nC
Aug. 2012 : Rev1
www.trinnotech.com
2/8

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भाग संख्याविवरणविनिर्माण
TGL60N100ND1NPT trench IGBTTRinno
TRinno


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