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2SD1896 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Power Transistor - Inchange Semiconductor

भाग संख्या 2SD1896
समारोह Silicon NPN Power Transistor
मैन्युफैक्चरर्स Inchange Semiconductor 
लोगो Inchange Semiconductor लोगो 
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<?=2SD1896?> डेटा पत्रक पीडीएफ

2SD1896 pdf
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1896
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IC= 50μA; IE= 0
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO Collector Cutoff Current
VCB= 100V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IE= -0.5A; VCE= 5V
COB Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
MIN TYP. MAX UNIT
100 V
100 V
5V
1.0 V
1.5 V
10 μA
10 μA
100 200
8 MHz
100 pF
isc websitewww.iscsemi.cn
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