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SSP5N60C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel MOSFET - SOURCESEMI

भाग संख्या SSP5N60C
समारोह 600V N-Channel MOSFET
मैन्युफैक्चरर्स SOURCESEMI 
लोगो SOURCESEMI लोगो 
पूर्व दर्शन
1 Page
		
<?=SSP5N60C?> डेटा पत्रक पीडीएफ

SSP5N60C pdf
SSP5N60/SSF5N60C
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS
Δ BVDSS
TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
IDSS Drain-Source Leakage Current
Gate-Source Leakage, Forward
IGSS
Gate-source Leakage, Reverse
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
V GS =10 V, ID = 2.A
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =4.5A, RG =25
(Note 4, 5)
VDS =480V, VGS =10V, ID =4.5A
(Note 4, 5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS=4.5A, VGS =0V
IS=4.5A, VGS=0V,dIF/dt=100A/us
IS=4.5A, VGS=0V,dIF/dt=100A/us
Min
600
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Min.
--
--
--
--
--
Typ Max Units
--
0.65
--
--
--
--
--
--
10
100
100
-100
V
V/°C
uA
uA
nA
nA
-- 4.0
2.0 2.5
V
710 920
65 85 pF
14 19
20
55
70
55
27
3.6
13.1
50
120
150
120
30
--
--
ns
nC
Typ.
--
--
--
330
2.67
Max.
4.5
16
1.4
--
--
Unit.
A
V
ns
uC
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25.0mH, IAS =4.0A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 4.0A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature
2/7 REV:1.0.0

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डाउनलोड[ SSP5N60C Datasheet.PDF ]


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