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MRF6522-10R1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - RF Power Field Effect Transistor - Motorola

भाग संख्या MRF6522-10R1
समारोह RF Power Field Effect Transistor
मैन्युफैक्चरर्स Motorola 
लोगो Motorola लोगो 
पूर्व दर्शन
1 Page
		
<?=MRF6522-10R1?> डेटा पत्रक पीडीएफ

MRF6522-10R1 pdf
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 50 µA)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 100 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 0.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 V, VGS = 0 V, f = 1.0 MHz)
Output Capacitance
(VDS = 26 V, VGS = 0 V, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 26 V, VGS = 0 V, f = 1.0 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Common–Source Power Gain
(VDS = 26 V, Pout = 10 W CW, IDQ = 100 mA, f = 960 MHz)
Drain Efficiency
(VDS = 26 V, Pout = 10 W CW, IDQ = 100 mA, f = 960 MHz)
Input Return Loss
(VDS = 26 V, Pout = 10 W CW, IDQ = 100 mA, f = 960 MHz)
VGS(th)
1.25
3.0
4.0
Vdc
VGS(Q)
2.25
4.0
5.0
Vdc
VDS(on)
— 0.9 Vdc
Ciss
Coss
Crss
— 17 —
— 10 —
— 0.9 —
pF
pF
pF
Gps 15 17 — dB
η 48 50 — %
IRL — — –9 dB
MRF6522–10R1
2
MOTOROLA RF DEVICE DATA
Archived 2005

विन्यास 8 पेज
डाउनलोड[ MRF6522-10R1 Datasheet.PDF ]


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