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TMAN16N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel MOSFET - TRinno

भाग संख्या TMAN16N60
समारोह N-channel MOSFET
मैन्युफैक्चरर्स TRinno 
लोगो TRinno लोगो 
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<?=TMAN16N60?> डेटा पत्रक पीडीएफ

TMAN16N60 pdf
TMAN16N60
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 600 --
--
V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
RDS(on)
gFS
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 8 A
VDS = 30 V, ID = 8 A
2 -- 4 V
-- 0.38 0.47 W
-- 10 --
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 3039 --
-- 256 --
-- 42 --
pF
pF
pF
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD = 300 V, ID = 16 A,
RG = 25
VDS = 480 V, ID = 16 A,
VGS = 10 V
-- 74 --
-- 61 --
-- 190 --
-- 71 --
-- 53 --
-- 15 --
-- 12 --
ns
ns
ns
ns
nC
nC
nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
IS
ISM
--- -- -- 16 A
--- -- -- 64 A
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 16 A
-- -- 1.5 V
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
trr
VGS = 0 V, IS = 16 A
-- 435 --
ns
Qrr
dIF / dt = 100 A/µs
-- 5.8 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=6.2mH, I AS = 16A, VDD = 50V, RG = 25Ω, Starting TJ= 25 , not subject to production test verified by design/characterization
3 I SD 16A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
April 2014 : Rev0.1
www.trinnotech.com
2/5

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