DataSheet.in

TMPF2N65AZG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel MOSFET - TRinno

भाग संख्या TMPF2N65AZG
समारोह N-channel MOSFET
मैन्युफैक्चरर्स TRinno 
लोगो TRinno लोगो 
पूर्व दर्शन
1 Page
		
<?=TMPF2N65AZG?> डेटा पत्रक पीडीएफ

TMPF2N65AZG pdf
TMP2N65AZ(G)/TMPF2N65AZ(G)
Electrical Characteristics : TC=25, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 650 --
--
V
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
--
IDSS
VDS = 520 V, TC = 125°C
--
-- 1 µA
-- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
3
--
5
V
RDS(on)
VGS = 10 V, ID = 0.9 A
-- 3.8 4.6 W
gFS
VDS = 30 V, ID = 0.9 A
-- 3.8 --
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 353 --
-- 40 --
-- 7.9 --
pF
pF
pF
SWITCHING
Turn-On Delay Time (Note 4,5)
Turn-On Rise Time (Note 4,5)
Turn-Off Delay Time (Note 4,5)
Turn-Off Fall Time (Note 4,5)
Total Gate Charge (Note 4,5)
Gate-Source Charge (Note 4,5)
Gate-Drain Charge (Note 4,5)
td(on)
VDD = 325 V, ID = 1.8 A,
--
18
--
ns
tr
RG = 25
-- 17 -- ns
td(off)
-- 46 -- ns
tf -- 16 -- ns
Qg
VDS = 520 V, ID = 1.8 A,
--
8.5
--
nC
Qgs
VGS = 10 V
-- 1.6 -- nC
Qgd -- 4.3 -- nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM
VSD
trr
Qrr
----
----
VGS = 0 V, IS = 1.8 A
VGS = 0 V, IS = 1.8 A
dIF / dt = 100 A/µs
-- -- 1.8 A
-- -- 7.2 A
-- -- 1.5 V
-- 270 --
ns
-- 0.8 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=44mH, I AS = 1.8A, VDD = 50V, RG = 25Ω, Starting TJ= 25
3 I SD 1.8A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
August 2012 : Rev0
www.trinnotech.com
2/7

विन्यास 7 पेज
डाउनलोड[ TMPF2N65AZG Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
TMPF2N65AZN-channel MOSFETTRinno
TRinno
TMPF2N65AZGN-channel MOSFETTRinno
TRinno


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English