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GB20B60PD1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IRGB20B60PD1 - International Rectifier

भाग संख्या GB20B60PD1
समारोह IRGB20B60PD1
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=GB20B60PD1?> डेटा पत्रक पीडीएफ

GB20B60PD1 pdf
IRGB20B60PD1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
— 0.32 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance
— 4.3 — 1MHz, Open Collector
— 2.05 2.35
IC = 13A, VGE = 15V
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.50 2.80 V IC = 20A, VGE = 15V
— 2.65 3.00
IC = 13A, VGE = 15V, TJ = 125°C
— 3.30 3.70
IC = 20A, VGE = 15V, TJ = 125°C
VGE(th)
Gate Threshold Voltage
3.0 4.0 5.0 V IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -11 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance
— 19 — S VCE = 50V, IC = 40A, PW = 80µs
ICES Collector-to-Emitter Leakage Current
— 1.0 250 µA VGE = 0V, VCE = 600V
— 0.1 — mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop
— 1.5 1.8 V IF = 4.0A, VGE = 0V
— 1.4 1.7
IF = 4.0A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig
4, 5,6,8,9
7,8,9
10
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
Qg Total Gate Charge (turn-on)
— 68 102
IC = 13A
17
Qgc Gate-to-Collector Charge (turn-on)
— 24 36 nC VCC = 400V
CT1
Qge Gate-to-Emitter Charge (turn-on)
— 10 15
VGE = 15V
Eon Turn-On Switching Loss
— 95 140
IC = 13A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 100 145 µJ VGE = +15V, RG = 10, L = 200µH
— 195 285
fTJ = 25°C
td(on)
Turn-On delay time
— 20 26
IC = 13A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
— 5.0 7.0 ns VGE = +15V, RG = 10, L = 200µH
— 115 135
TJ = 25°C
tf Fall time
— 6.0 8.0
Eon Turn-On Switching Loss
— 165 215
IC = 13A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 150 195 µJ VGE = +15V, RG = 10, L = 200µH
— 315 410
fTJ = 125°C
11,13
WF1,WF2
td(on)
Turn-On delay time
— 19 25
IC = 13A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
— 6.0 8.0 ns VGE = +15V, RG = 10, L = 200µH
— 125 140
TJ = 125°C
12,14
WF1,WF2
tf Fall time
— 13 17
Cies Input Capacitance
— 1560 —
VGE = 0V
16
Coes Output Capacitance
— 95 —
VCC = 30V
Cres
gCoes eff.
gCoes eff. (ER)
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Effective Output Capacitance (Energy Related)
— 20 — pF f = 1Mhz
— 83 —
VGE = 0V, VCE = 0V to 480V
— 61 —
15
TJ = 150°C, IC = 80A
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22, VGE = +15V to 0V
trr Diode Reverse Recovery Time
— 28 42 ns TJ = 25°C IF = 4.0A, VR = 200V,
19
— 38 57
TJ = 125°C di/dt = 200A/µs
Qrr Diode Reverse Recovery Charge
— 40 60 nC TJ = 25°C IF = 4.0A, VR = 200V,
21
— 70 105
TJ = 125°C di/dt = 200A/µs
Irr Peak Reverse Recovery Current
— 2.9 5.2 A TJ = 25°C IF = 4.0A, VR = 200V,
19,20,21,22
Notes:
— 3.7 6.7
TJ = 125°C di/dt = 200A/µs
CT5
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2 www.irf.com

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