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TSHA6501 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Infrared Emitting Diode - Vishay

भाग संख्या TSHA6501
समारोह Infrared Emitting Diode
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=TSHA6501?> डेटा पत्रक पीडीएफ

TSHA6501 pdf
TSHA6500, TSHA6501, TSHA6502, TSHA6503
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors
875 nm, GaAlAs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t 5 s, 2 mm from case
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
°C
°C
°C
°C
K/W
200
180
160
140
120 RthJA = 230 K/W
100
80
60
40
20
0
0
21142
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Temperature coefficient of φe
Angle of half intensity
IF = 100 mA, tp = 20 ms
IF = 100 mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
Fall time
Virtual source diameter
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
Note
Tamb = 25 °C, unless otherwise specified
120
100
80
RthJA = 230 K/W
60
40
20
0
0
21143
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
SYMBOL
VF
TKVF
IR
Cj
TKφe
ϕ
λp
Δλ
TKλp
tr
tr
tf
tf
d
MIN.
TYP.
1.5
- 1.6
20
- 0.7
± 24
875
80
0.2
600
300
600
300
2.2
MAX.
1.8
100
UNIT
V
mV/K
µA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Document Number: 81022
Rev. 1.7, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
167

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