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SSM04N70BGP-A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel Enhancement-mode Power MOSFET - Silicon Standard

भाग संख्या SSM04N70BGP-A
समारोह N-channel Enhancement-mode Power MOSFET
मैन्युफैक्चरर्स Silicon Standard 
लोगो Silicon Standard लोगो 
पूर्व दर्शन
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SSM04N70BGP-A pdf
SSM04N70BGP-A
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance
Test Conditions
VGS=0V, ID= 1mA
Reference to 25°C, ID=1mA
VGS=10V, ID=2A
Min. Typ. Max. Units
650 - - V
- 0.6 - V/°C
- - 2.4
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS=VGS, ID=250uA
VDS=20V, ID=1A
VDS=600V, VGS=0V
VDS=480V ,VGS=0V, Tj = 150°C
VGS30V
ID=4A
VDS=480V
VGS=10V
VDS=300V
ID=4A
RG=10, VGS=10V
RD=75
VGS=0V
VDS=25V
f=1.0MHz
2 - 4V
- 2.5 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 16.7 - nC
- 4.1 - nC
- 4.9 - nC
- 11 - ns
- 8.3 - ns
- 23.8 - ns
- 8.2 - ns
- 950 - pF
- 65 - pF
- 6 - pF
Source-Drain Diode
Symbol
VSD
IS
I SM
Parameter
Forward voltage 2
Continuous source current (body diode)
Pulsed source current (body diode)1
Test Conditions
IS= 4A, VGS=0V
VD=VG=0V , VS=1.3V
Min. Typ. Max. Units
- - 1.5 V
- - 4A
- - 15 A
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
9/29/2006 Rev.3.1
www.SiliconStandard.com
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