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PJD5NA50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 500V N-Channel MOSFET - Pan Jit International

भाग संख्या PJD5NA50
समारोह 500V N-Channel MOSFET
मैन्युफैक्चरर्स Pan Jit International 
लोगो Pan Jit International लोगो 
पूर्व दर्शन
1 Page
		
<?=PJD5NA50?> डेटा पत्रक पीडीएफ

PJD5NA50 pdf
PPJU5NA50 / PJD5NA50 / PJP5NA50 / PJF5NA50
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITION
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic (Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VGS=10V,ID=2.5A
VDS=500V,VGS=0V
VGS=+30V,VDS=0V
IS=5A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=400V, ID=5A,
VGS=10V (Note 2,3)
VDS=25V, VGS=0V,
f=1.0MHZ
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=250V, ID=5A,
RG=25(Note 2,3)
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
IS
---
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
---
Reverse Recovery Time
trr VGS=0V, IS=5A
Reverse Recovery Charge
Qrr dIF/ dt=100A/us (Note 2)
NOTES :
1. L=30mH, IAS=3.8A, VDD=50V, RG=25ohm, Starting TJ=25oC
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. Guaranteed by design, not subject to production testing
MIN. TYP. MAX. UNITS
500 -
-V
2 2.8 4
V
-
1.38 1.55
-
0.01
1.0
uA
-
+10 +100
nA
- 0.9 1.4 V
- 11 -
- 3.7 -
- 3.8 -
- 491 -
- 75 -
- 1.2 -
- 9.2 -
- 24 -
- 20 -
- 23 -
nC
pF
ns
- - 5A
- - 20 A
- 426 -
- 2.2 -
ns
uC
March 10,2014-REV.00
Page 2

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