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PJF5NA80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 800V N-Channel MOSFET - Pan Jit International

भाग संख्या PJF5NA80
समारोह 800V N-Channel MOSFET
मैन्युफैक्चरर्स Pan Jit International 
लोगो Pan Jit International लोगो 
पूर्व दर्शन
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<?=PJF5NA80?> डेटा पत्रक पीडीएफ

PJF5NA80 pdf
PPJU5NA80 / PJD5NA80 / PJP5NA80 / PJF5NA80
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TEST CONDITION
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic (Note 4)
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VGS=10V,ID=2.5A
VDS=800V,VGS=0V
VGS=+30V,VDS=0V
IS=5A,VGS=0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=640V, ID=5A,
VGS=10V (Note 2,3)
VDS=25V, VGS=0V,
f=1.0MHZ
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
td(on)
tr
td(off)
tf
VDD=400V, ID=5A,
RG=25Ω
(Note 2,3)
Maximum Continuous Drain-Source
Diode Forward Current
IS
---
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
---
Reverse Recovery Time
Reverse Recovery Charge
trr VGS=0V, IS=5A
Qrr dIF/ dt=100A/us (Note 2)
NOTES :
1. L=30mH, IAS=4.6A, VDD=50V, RG=25 ohm, Starting TJ=25oC
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. Guaranteed by design, not subject to production testing
MIN. TYP. MAX. UNITS
800 - - V
234V
- 2.2 2.7 Ω
- 0.01 1
uA
- +10 +100 nA
- 0.89 1.4 V
- 17 -
- 4.6 -
- 7.4 -
- 660 -
- 78 -
- 2.8 -
- 12 -
- 28 -
- 31 -
- 27 -
nC
pF
ns
- - 5A
- - 20 A
- 550 -
-3-
ns
uC
March 10,2014-REV.00
Page 2

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डाउनलोड[ PJF5NA80 Datasheet.PDF ]


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