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MS17N03Q8 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Bruckewell

भाग संख्या MS17N03Q8
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
1 Page
		
<?=MS17N03Q8?> डेटा पत्रक पीडीएफ

MS17N03Q8 pdf
Preliminary_MS17N03Q8
N-Channel Logic Level Enhancement
Mode MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
VDS Drain-Source Voltage
30
VGS Gate-Source Voltage
±20
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
10
8
IDM Pulsed Drain Current (Note 1)
40
IAS Avalanche Current
EAS Avalanche Energy @ L=0.1mH , ID=10A , RG=25Ω
12
5
EAR Repetitive Avalanche Energy @ L=0.005mH (Note 2)
2.5
Power Dissipation (TA=25°C) (Note 3)
PD
Power Dissipation (TA=100°C)
3
1.5
TJ/TSTG
Operating Junction and Storage Temperature Range
-55 to +175
100% UIS testing in condition of VD=15V , L=0.1mH , VG=10V, IL=10A, Rated VDS=30V N-CH
Unit
V
V
A
A
A
A
mJ
mJ
W
W
°C
Thermal Data
Symbol
Parameter
Max.
Rthj-c
Thermal Resistance, Junction-to-Case, max
25
Rthj-a
Thermal Resistance, Junction-to-Ambient, max
50*3
Note:
1. Pulse width limited by maximum junction temperature.
2. Duty cycle1%
3. Surface mounted on 1 in2 copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad.
Units
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Test Conditions
VGS(th)
VDS = VGS, ID = 250μA
BVDSS
VGS = 0 V , ID = 250μA
GFS *1
VDS = 5 V, ID = 10 A
IGSS VGS = ±20
IDSS
ID(ON) *1
VDS = 24 V , VGS = 0 V
VDS = 20 V , VGS = 0 V , Tj = 125°C
VGS = 10 V , ID = 10 A
RDS(ON) *1
VGS = 10 V , ID = 10 A
VGS = 4.5 V , ID = 6 A
Min Typ. Max. Units
1 1.5 3 V
30 --
-- V
-- 80 -- S
--
--
±100
nA
-- -- 10 uA
25
10 --
-- A
-- 13 15
mΩ
-- 20 25
Publication Order Number: [MS17N03Q8]
© Bruckewell Technology Corporation Rev. A -2014

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