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MS15N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Bruckewell

भाग संख्या MS15N60
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
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<?=MS15N60?> डेटा पत्रक पीडीएफ

MS15N60 pdf
MS15N60
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Power Dissipation (TC=25°C)
PD
Derate above 25C
TSTG
TL
Operating Junction and Storage Temperature
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
Note:
1. Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=15A, VDD=50V, L=0.5mH, RG=25Ω, starting TJ=+25°C.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Value
245
2
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance , Junction-to-Case
RθJA Thermal Resistance , Junction-to-Ambient
Typ. Max.
-- 0.51
-- 62.5
Unit
W
W/°C
°C
°C
Units
°C/W
Static Characteristics
Symbol
Parameter
VGS(th)
Gate Threshold Voltage
BVDSS
Drain-Source Breakdown Voltage
BVDSS /TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
*RDS(ON)
Gate-Body Leakage Current,
Forward
Static Drain-Source
On-Resistance
Test Conditions
VDS = VGS, ID=250μA
VGS = 0 V , ID=250μA
ID = 250μA, Referenced to
25°C
VDS = 600 V , VGS = 0 V
VDS = 480 V , TC = 125°C
VGS = ±30
VGS = 10 V , ID = 7.5 A
Min Typ. Max. Units
2.0 -- 4.0 V
600 -- -- V
-- 0.7 -- V/°C
-- -- 1 uA
10
-- -- ±100 nA
-- 0.45 0.52 Ω
Dynamic Characteristics
Symbol Parameter
td(on)
Turn-On Time
tr Turn-On Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Publication Order Number: [MS15N60]
Test Conditions
VDD = 250 V, ID = 15 A,
VGS = 10 V , RG = 9.1 Ω
Min
--
--
--
--
Typ.
50
78
120
66
Max.
101
162
261
128
Units
ns
ns
ns
ns
© Bruckewell Technology Corporation Rev. A -2014

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डाउनलोड[ MS15N60 Datasheet.PDF ]


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