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MS15N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Bruckewell

भाग संख्या MS15N50
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
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<?=MS15N50?> डेटा पत्रक पीडीएफ

MS15N50 pdf
MS15N50
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Power Dissipation (TC=25°C)
PD
Derate above 25C
TSTG
Operating Junction and Storage Temperature
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
Note:
1. TJ=+25 to +150.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD=15A, dI/dt<100A/s, VDD<BVDSS, TJ=+150.
4. IAS=15A, VDD=50V, L=6mH, RG=25", starting TJ=+25.
Value
250
2
-55 to +150
300
Unit
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance , Junction-to-Case
RθJA Thermal Resistance , Junction-to-Ambient
Typ.
Max.
Units
-- 0.5
°C/W
-- 62.5
Static Characteristics
Symbol
Parameter
VGS(th)
Gate Threshold Voltage
BVDSS
Drain-Source Breakdown Voltage
BVDSS /TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
*RDS(ON)
Gate-Body Leakage Current,
Forward
Static Drain-Source
On-Resistance
Test Conditions
VDS = VGS, ID = 250μA
VGS = 0 V , ID = 250μA
ID = 250μA, Referenced to
25°C
VDS = 500 V , VGS = 0 V
VDS = 400 V , TC = 125°C
VDS = ±30
VGS = 10 V , ID = 7.5 A
Min Typ. Max. Units
2.0 -- 4.0 V
500 -- -- V
-- 0.5 -- V/°C
-- -- 1 uA
25
-- -- ±100 nA
-- 0.38 0.42 Ω
Dynamic Characteristics
Symbol Parameter
td(on)
Turn-On Time
tr Turn-On Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Test Conditions
VDD = 250 V, ID = 15 A,
VGS = 10 V , RG = 10 Ω
Min
--
--
--
--
Typ.
40
140
100
85
Max.
--
--
--
--
Units
ns
ns
ns
ns
Publication Order Number: [MS15N50]
© Bruckewell Technology Corporation Rev. A -2014

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डाउनलोड[ MS15N50 Datasheet.PDF ]


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