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MS14N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Bruckewell

भाग संख्या MS14N60
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
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<?=MS14N60?> डेटा पत्रक पीडीएफ

MS14N60 pdf
MS14N60
900V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
TSTG
Operating Junction and Storage Temperature
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
Note:
1. Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=14A, VDD=50V, L=0.5mH, RG=25Ω, starting TJ=+25°C.
3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Value
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance , Junction-to-Case
RθJA Thermal Resistance , Junction-to-Ambient
Typ. Max.
-- 2.58
-- 62.5
Unit
°C
°C
Units
°C/W
Static Characteristics
Symbol
Parameter
VGS(th)
Gate Threshold Voltage
BVDSS
Drain-Source Breakdown Voltage
BVDSS /TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
*RDS(ON)
Gate-Body Leakage Current,
Forward
Static Drain-Source
On-Resistance
Test Conditions
VDS = VGS, ID = 250μA
VGS =0 V , ID = 250μA
ID = 250μA, Referenced to
25°C
VDS = 600 V , VGS = 0 V
VDS = 480 V , TC = 125°C
VDS = ±30
VGS = 10 V , ID = 8.4 A
Min Typ. Max. Units
2.0 4.0 V
600 -- -- V
-- 0.7 -- V/°C
-- -- 1 uA
10
-- -- ±100 nA
-- -- 0.55 Ω
Dynamic Characteristics
Symbol Parameter
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
td(on)
Turn-On Time
tr Turn-On Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Test Conditions
VDS = 25 V, VGS = 0 V,
f=1.0MHz
VDD = 250 V, ID =14 A,
VGS = 10 V , RG =9.1 Ω
Min
--
--
--
--
--
--
--
Typ.
2222
180
17
16
30
48
34
Max.
--
--
--
--
--
--
--
Units
pF
pF
pF
ns
ns
ns
ns
Publication Order Number: [MS14N60]
© Bruckewell Technology Corporation Rev. A -2014

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डाउनलोड[ MS14N60 Datasheet.PDF ]


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