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MS13P21 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel MOSFET - Bruckewell

भाग संख्या MS13P21
समारोह P-Channel MOSFET
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
1 Page
		
<?=MS13P21?> डेटा पत्रक पीडीएफ

MS13P21 pdf
MS13P21
P-Channel 20-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Currenta (TA=25°C)
Continuous Drain Currenta (TA =70°C)
IDM Pulsed Drain Currentb
IS Continuous Source Current (Diode Conduction)a
Power Dissipationa (TA =25°C)
PD Power Dissipationa (TA =70°C)
TJ/TSTG
Operating Junction and Storage Temperature
Value
-20
±8
-1.7
-1.4
-2.5
±0.28
0.34
0.22
-55 to +150
Unit
V
V
A
A
A
A
W
W
°C
THERMAL RESISTANCE RATINGS
Symbol
Parameter
RTHJA
Maximum Junction-to-Ambient C/Wa (t <= 5 sec)
Maximum Junction-to-Ambient C/Wa (Steady-State)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Maximum
375
430
Units
°C/W
Static
Symbol
VGS
Parameter
Gate Threshold Voltage
Test Conditions
VDS = VGS, ID =-250μA
Min Typ. Max. Units
-0.4 V
IGSS Gate-Body Leakage
VDS = 0 V , VGS = ±8 V
±100 nA
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain CurrentA
VDS = -16 V , VGS = 0 V
VDS = -16 V , VGS = 0 V , TJ= 55°C
VDS = -5 V, VGs = -4.5 V
-5
-1 uA
-10
A
IDS(on)
gfs
Drain-Source On-ResistanceA
Forward TranconductanceA
VGS = -4.5 V, ID = -1.7 A
VGS = -2.5 V, ID = -1.5 A
VDS = -5V, ID = -1.25 A
79 mΩ
110
9S
VSD Diode Forward Voltage
IS = -0.46 V, VGS = 0 V
-0.65
V
Dynamicb
Symbol Parameter
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Test Conditions
VDD = -10 V , IL = -1 A,
VGEN = -4.5 V , RG = 6 Ω
Min Typ. Max. Units
-- 10 -- ns
-- 9 -- ns
-- 27 -- ns
-- 11 -- ns
Publication Order Number: [MS13P21]
© Bruckewell Technology Corporation Rev. A -2014

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