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MS13N50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Bruckewell

भाग संख्या MS13N50
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
1 Page
		
<?=MS13N50?> डेटा पत्रक पीडीएफ

MS13N50 pdf
MS13N50
500V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
TJ/TSTG
Operating Junction and Storage Temperature
Note:
1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Value
-55 to +175
Thermal Resistance Characteristics
Symbol
Parameter
Rthjc
RθJA
Typical thermal resistance
Typ.
--
--
Max.
0.64
62.5
Static Characteristics
Symbol
Test Conditions
BVDSS
VGS = 0 V , ID = 250μA
BVDSS /TJ
ID = 250μA, Referenced to 25°C
VGS VDS = VGS, ID = 250μA
GFS VDS = 40 V, ID = 6.5A
IDSS
VDS = 500 V , VGS = 0 V
VDS = 400 V , VGS = 0 V , Tj= 125°C
IGSS VGS = ±30
*RDS(ON)
VGS = -10 V , ID = 6.5 A
Min Typ.
500 --
-- 0.50
2.0
-- --
-- --
-- 3.8
Unit
°C
Units
°C/W
Max.
--
--
4.0
15
1
10
±100
4.8
Units
V
V/°C
V
S
uA
nA
Ω
Dynamic Characteristics
Symbol
Test Conditions
Qg
Qgs
VDS = 400 V,ID = 13 A,
VGS = 10 V
Qgd
td(on)
tr
td(off)
VDS = 250 V, ID = 13 A,
RG = 25 Ω
tf
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0MHz
Min Typ. Max. Units
-- 43 56 nC
-- 7.5 10 nC
-- 18.5 24 nC
-- 25 57.5 ns
-- 100 220 ns
-- 130 273 ns
-- 100 220 ns
--
1580
2054
pF
-- 180 234 pF
-- 20 28 pF
Source-Drain Diode Characteristics
Symbol
Test Conditions
IS
ISM
Publication Order Number: [MS13N50]
Min Typ. Max. Units
-- -- 13
A
-- -- 52
© Bruckewell Technology Corporation Rev. A -2014

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डाउनलोड[ MS13N50 Datasheet.PDF ]


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MS13N50N-Channel MOSFETBruckewell
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