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MS12N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Bruckewell

भाग संख्या MS12N60
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
1 Page
		
<?=MS12N60?> डेटा पत्रक पीडीएफ

MS12N60 pdf
MS12N60
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Power Dissipation (TC=25°C)
PD
Derating Factor above 25 °C
Maximum Temperature for Soldering @ Lead at 0.125
TL
in(0.318mm) from case for 10 seconds
TSTG
TJ
Operating Junction Temperature
Storage Temperature
NOTE:
1. TJ=+25°C to +150°C.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD=12A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150°C.
4. IAS=12A, VDD=50V, L=11mH, RG=25Ω, starting TJ=+25°C.
Value
225
1.78
300
-55 to +150
150
Unit
W
W
°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Min.
--
--
Typ.
--
--
Max.
0.56
62.5
Units
°C/W
Static Characteristics
Symbol
Parameter
BVDSS
Drain-Source Breakdown
Voltage
BVDSS /TJ
Breakdown Voltage
Temperature coefficient
VGS(th)
Gate Threshold Voltage
Drain-Source Leakage
IDSS
Current
Gate-Source Leakage,
IGSS
Forward
*RDS(ON)
Static Drain-Source
On-state Resis-tance
Test Conditions
VGS = 0 V , ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = VGS, ID = 250μA
VDS = 500 V , VGS = 0 V
VDS = 400 V , TC = 125°C
VGS = ±30 V
VGS = 10 V , ID = 6.0 A
Min
600
2.0
--
--
--
Typ.
660
0.5
--
--
--
0.53
Max.
--
Units
V
4.0
1
25
±100
0.65
V
V
uA
nA
mΩ
Dynamic Characteristics
Symbol Parameter
Qg Total Gate Charge
Qgs Qgs Gate-Source Charge
Qgd Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VDS = 250 V,ID = 12 A,
VGS = 10 V
Min
--
--
--
Typ. Max. Units
48 63
8.5 -- nC
21 --
Publication Order Number: [MS12N60]
© Bruckewell Technology Corporation Rev. A -2014

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डाउनलोड[ MS12N60 Datasheet.PDF ]


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