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MS10N80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Bruckewell

भाग संख्या MS10N80
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
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<?=MS10N80?> डेटा पत्रक पीडीएफ

MS10N80 pdf
MS10N80
800V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
TJ,TSTG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
TL
1/8'' from case for 5 seconds
Drain current limited by maximum junction temperature
Value
-55 to +150
300
Unit
°C
°C
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient
Min.
--
--
Typ.
--
--
Max.
1.43
62.5
Units
°C/W
On Characteristics
Symbol Parameter
VGS Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions
VDS = VGS,ID = 250μA
VGS = 10 V,ID = 5.0 A
Min Typ. Max. Units
3.0 -- 5.0 V
-- 1.7 2.1 Ω
Off Characteristics
Symbol Parameter
BVDSS
BVDSS
/TJ
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
IDSS Current
IGSSF
Gate-Body Leakage
Current, Forward
IGSSR
Gate-Body Leakage
Current, Reverse
Test Conditions
VGS = 0 V , ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = 800 V , VGS = 0 V
VDS = 640 V , TC = 125°C
VGS = 30 V , VDS = 0 V
VGS = -30 V , VDS = 0 V
Min
800
--
--
--
--
Typ.
--
1.0
--
--
--
Max.
--
Units
V
-- V/°C
10 μA
100
100 nA
-100
nA
Dynamic Characteristics
Symbol Parameter
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
Min Typ. Max. Units
-- 2200 -- pF
VDS = 25 V, VGS = 0 V,
--
190
-- pF
f=1.0MHz
-- 20 -- pF
Dynamic Characteristics
Symbol Parameter
td(on)
Turn-On Time
tr Turn-On Time
td(off) Turn-Off Delay Time
Publication Order Number: [MS10N80]
Test Conditions
Min Typ. Max. Units
-- 60 -- ns
VDS = 400 V, ID = 7 A,
--
150
-- ns
RG = 25 Ω
-- 110 -- ns
© Bruckewell Technology Corporation Rev. A -2014

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डाउनलोड[ MS10N80 Datasheet.PDF ]


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