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MS10N65SJ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Bruckewell

भाग संख्या MS10N65SJ
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
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MS10N65SJ pdf
MS10N65SJ 10A 650V
N-Channel Super Junction MOSFET
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Test Conditions
Static Characteristics
VGS
VDS = VGS, ID=250μA
*RDS(ON)
VGS =10V,ID =4.75A
VGS=10V, ID=4.75A, Tj=150°C
RG f=1 MHZ, open drain
BVDSS
VGS=0, ID=250μA
IDSS
VDS =650V,VGS =0V
VDS =650V, VGS =0, Tj=125°C
IGSSF
VGS =20V,VDS =0V
IGSSR
VGS =-20V,VDS =0V
Dynamic Characteristics
Ciss
Coss
VGS=0V, VDS=25V, f=1MHz
Crss
td(ON)
tr
td(OFF)
VDS =300V,ID =9.5A, RG = 25 Ω
tf
Qg
Qgs VDS =480V,ID =9.5A, VGS =10V
Qgd
Source-Drain Diode Characteristics
IS
ISM
VSD
IS = 9.5A, VGS = 0 V
trr
IS = 9.5 A, VGS = 0 V diF/dt = 100 A/μs
Qrr
Min.
2.0
-
-
-
650
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.35
0.63
5
700
0.1
-
-
-
1250
600
5
6
3.5
54
7
7.1
14.5
41
-
-
-
322
4.4
Max.
4.0
0.38
-
-
-
1
100
100
-100
1750
840
7
8.5
4.8
76
9.8
10
-
-
9.5
26.5
1.2
-
-
Unit
V
Ω
Ω
Ω
V
uA
nA
nA
pF
ns
nC
A
V
nS
uC
©Bruckewell Technology Corporation Rev. A -2013

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